APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 1 C 7 11 cr1 q2 10 9 12 ntc 12 34 6 5 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings these devices are sensitive to electrostatic disc harge. proper handling proc edures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 900 v t c = 25c 59 i d continuous drain current t c = 80c 44 i dm pulsed drain current 150 a v gs gate - source voltage 20 v r dson drain - source on resistance 60 m ? p d maximum power dissipation t c = 25c 462 w i ar avalanche current (repetitive and non repetitive) 8.8 a e ar repetitive avalanche energy 2.9 e as single pulse avalanche energy 1940 mj application ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? cr1 sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant boost chopper super junction mosfet power module v dss = 900v r dson = 60m ? max @ tj = 25c i d = 59a @ tc = 25c downloaded from: http:///
APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 2 C 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 900v t j = 25c 200 i dss zero gate voltage drain current v gs = 0v,v ds = 900v t j = 125c 1000 a r ds(on) drain C source on resistance v gs = 10v, i d = 52a 50 60 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 6ma 2.5 3 3.5 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 13.6 c oss output capacitance v gs = 0v ; v ds = 100v f = 1mhz 0.66 nf q g total gate charge 540 q gs gate C source charge 64 q gd gate C drain charge v gs = 10v v bus = 400v i d = 52a 230 nc t d(on) turn-on delay time 70 t r rise time 20 t d(off) turn-off delay time 400 t f fall time inductive switching (125c) v gs = 10v v bus = 600v i d = 52a r g = 3.8 ? 25 ns e on turn-on switching energy 1.8 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 600v i d = 52a ; r g = 3.8 ? 1.5 mj e on turn-on switching energy 2.52 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 600v i d = 52a ; r g = 3.8 ? 1.7 mj cr1 sic diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 96 600 i rm maximum reverse leakage current v r =1200v t j = 175c 168 3000 a i f dc forward current tc = 100c 30 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 30a t j = 175c 2.3 3 v q c total capacitive charge i f = 30a, v r = 600v di/dt =1000a/s 120 nc f = 1mhz, v r = 200v 288 c total capacitance f = 1mhz, v r = 400v 207 pf downloaded from: http:///
APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 3 C 7 thermal and package characteristics symbol characteristic min typ max unit coolmos 0.27 r thjc junction to case thermal resistance sic diode 0.63 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 4 C 7 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 6v 0 80 160 240 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =20, 8v 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 900 925 950 975 1000 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage maximum safe operating area 10 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =400v i d =52a t j =25c downloaded from: http:///
APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 5 C 7 hard switching zcs zvs 0 100 200 300 400 20 25 30 35 40 45 50 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =600v d=50% r g =3.8 ? t j =125c t c =75c switching energy vs current eon eoff 0 1 2 3 4 10 20 30 40 50 60 70 80 i d , drain current (a) eon and eoff (mj) v ds =600v r g =3.8 ? t j =125c l=100h on resistance vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds(on) , drain to source on resistance (normalized) switching energy vs gate resistance eon eoff 0 1 2 3 4 5 6 0 5 10 15 20 gate resistance (ohms) switching energy (mj) v ds =600v i d =52a t j =125c l=100h downloaded from: http:///
APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 6 C 7 typical cr1 sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 75 150 225 300 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 300 600 900 1200 1500 1800 2100 1 10 100 1000 v r reverse voltage c, capacitance (pf) coolmos? comprise a new family of transistors developed by in fineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
APTC90DAM60CT1G APTC90DAM60CT1G C rev 2 october, 2012 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer s final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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